丝印：GA4；Package：X1-DFN1612-8；4 CHANNEL 300mA HIGH PSRR LOW NOISE LDO WITH ENABLE

Features - Low VDD and Wide VDD Range: 1.7V to 5.25V - Each Channel Output Current: 300mA - VOUT Accuracy ±1 - Ripple Rejection 75dB at 1kHz - Low Output Noise, 60μVrms from 10Hz to 100kHz - Total 4 Channel Quiescent Current is Typically 160μA - VOUT Fixed 1.2V to 3.6V - Totally Lead-Free

文件：1.35145 Mbytes 页数：15 Pages

DIODES

美台半导体

丝印：GA4；Package：WQFN(NGP)；LM4910 Output Capacitor-less Stereo 35mW Headphone Amplifier

1FEATURES 2• Eliminates headphone amplifier output coupling capacitors • Eliminates half-supply bypass capacitor • Advanced pop & click circuitry eliminates noises during turn-on and turn-off • Ultra-low current shutdown mode • Unity-gain stable • 2.2V - 5.5V operation • Available in spac

文件：1.31359 Mbytes 页数：31 Pages

TI

德州仪器

丝印：GA4；Package：WQFN(NGP)；LM4910 Output Capacitor-less Stereo 35mW Headphone Amplifier

1FEATURES 2• Eliminates headphone amplifier output coupling capacitors • Eliminates half-supply bypass capacitor • Advanced pop & click circuitry eliminates noises during turn-on and turn-off • Ultra-low current shutdown mode • Unity-gain stable • 2.2V - 5.5V operation • Available in spac

文件：1.31359 Mbytes 页数：31 Pages

TI

德州仪器

丝印：GA4；Package：SOT-23；ADJUSTABLE PRECISION SHUNT REGULATORS

文件：709.08 Kbytes 页数：18 Pages

BCDSEMI

新进半导体

丝印：GA4；Package：SOT-23；ADJUSTABLE PRECISION SHUNT REGULATORS

文件：760.88 Kbytes 页数：18 Pages

BCDSEMI

新进半导体

丝印：GA4；Package：uSiP；TPSM8282x, TPSM8282xA 1-A, 2-A, and 3-A High Efficiency Step-Down Converter MicroSiP??Power Module with Integrated Inductor

文件：6.19472 Mbytes 页数：54 Pages

TI

德州仪器

丝印：GA4；Package：uSiP；TPSM8282x 1-A, 2-A, and 3-A High Efficiency Step-Down Converter MicroSiP??Power Module with Integrated Inductor

文件：3.98589 Mbytes 页数：39 Pages

TI

德州仪器

丝印：GA4；Package：uSiP；TPSM8282x 1-A, 2-A, and 3-A High Efficiency Step-Down Converter MicroSiP??Power Module with Integrated Inductor

文件：4.75241 Mbytes 页数：44 Pages

TI

德州仪器

Dual INT-A-PAK Low Profile Half-Bridge (Standard Speed IGBT), 400 A

FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Low VCE(on) • Square RBSOA • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996

文件：126.92 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

HALF-BRIDGE IGBT DUAL INT-A-PAK Ultra-FastTM Speed IGBT

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved Benefits • Incre

文件：239 Kbytes 页数：10 Pages

IRF