丝印：G900P15；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G900P15D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：950.59 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G900P15；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G900P15K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：618.23 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G900P15；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G900P15A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch lDC/DC converters

文件：759.17 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G900P15；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The G900P15M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：919.87 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G900P15；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G900P15T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：951.42 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G900P15；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G900P15D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：950.59 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G900P15；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G900P15K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：618.23 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G900P15；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G900P15A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch lDC/DC converters

文件：759.17 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G900P15；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The G900P15M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：919.87 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G900P15；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G900P15T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：951.42 Kbytes 页数：6 Pages

GOFORD

谷峰半导体