PDP TRENCH IGBT

Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on)and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperatur

文件：250.11 Kbytes 页数：8 Pages

IRF

PDP TRENCH IGBT

Description\nThis IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on)and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature • Advanced Trench IGBT Technology\n• Optimized for Sustain and Energy Recovery\n   circuits in PDP applications\n• Low VCE(on) and Energy per Pulse (EPULSE™)\n   for improved panel efficiency\n• High repetitive peak current capability\n• Lead Free package;

Infineon

英飞凌

PDP TRENCH IGBT

Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on)and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperatur

文件：250.11 Kbytes 页数：8 Pages

IRF

DIP

OMRON/欧姆龙

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