G7S313UPBF数据手册Infineon中文资料规格书

描述 Description

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on)and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.

特性 Features

• Advanced Trench IGBT Technology
• Optimized for Sustain and Energy Recovery
   circuits in PDP applications
• Low VCE(on) and Energy per Pulse (EPULSE™)
   for improved panel efficiency
• High repetitive peak current capability
• Lead Free package

应用 Application

• Low VCE(on) and Energy per Pulse (EPULSE™)
   for improved panel efficiency
• High repetitive peak current capability
• Lead Free package