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HGTD6N40E1

6A,400Vand500VN-ChannelIGBTs

Description TheHGTD6N40E1,HGTD6N40E1S,HGTD6N50E1,andHGTD6N50E1Saren-channelenhancement-modeinsulatedgatebipolartransistors(IGBTs)designedforhighvoltage,lowon-dissipationapplicationssuchasswitchingregulatorsandmotordrivers.Thesetypescanbeoperateddirectlyfromlowp

Intersil

Intersil Corporation

HGTD6N40E1S

6A,400Vand500VN-ChannelIGBTs

Description TheHGTD6N40E1,HGTD6N40E1S,HGTD6N50E1,andHGTD6N50E1Saren-channelenhancement-modeinsulatedgatebipolartransistors(IGBTs)designedforhighvoltage,lowon-dissipationapplicationssuchasswitchingregulatorsandmotordrivers.Thesetypescanbeoperateddirectlyfromlowp

Intersil

Intersil Corporation

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