INSULATED GATE BIPOLAR TRANSISTOR,Standard Speed IGBT

• Generation 4 IGBTs offer highest efficiency available\n• IGBTs optimized for specified application conditions\n• Designed to be a \"drop-in\" replacement for equivalent industry-standard Generation 3 IR IGBTs • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)\n• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3\n• Industry standard TO-247AC package\n• Surface Mountable;

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)

VCES= 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry stan

文件：147.44 Kbytes 页数：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)

VCES = 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-pack

文件：213.92 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)

Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design

文件：157.32 Kbytes 页数：8 Pages

IRF