G4PC50W中文资料IRF数据手册PDF规格书

厂商型号	G4PC50W
功能描述	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)
文件大小	157.32 Kbytes
页面数量	8 页
生产厂商	IRF
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-12-10 23:01:00
人工找货	G4PC50W价格和库存，欢迎联系客服免费人工找货

特性 Features

• Designed expressly for Switch-Mode Power Supply and PFC

(power factor correction) applications

• Industry-benchmark switching losses improve efficiency of all power supply topologies

• 50 reduction of Eoff parameter

• Low IGBT conduction losses

• Latest-generation IGBT design and construction offers

tighter parameters distribution, exceptional reliability

Benefits

• Lower switching losses allow more cost-effective operation

than power MOSFETs up to 150 kHz (hard switched mode)

• Of particular benefit to single-ended converters and boost PFC topologies 150W and higher

• Low conduction losses and minimal minority-carrier recombination make these

an excellent option for resonant mode switching as well (up to >300 kHz)