INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)

Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult

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IRF

Compliance with ROHS requirements

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Cable interface for isolation and low common mode emissions

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1000 BASE -T QUAD PORT MAGNETICS MODULES

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1000 BASE -T QUAD PORT MAGNETICS MODULES

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Designed for Ethernet 1000 BASE-T, full Quad port applications

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1000 BASE -T QUAD PORT MAGNETICS MODULES

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1000 BASE -T QUAD PORT MAGNETICS MODULES

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Compliant with IEEE 802.3ab standard for 1000 BASE-T

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Supports 16 pairs of category 5 UTP cable

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