丝印：G350N06D；Package：DFN3X3-8LDUAL；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G350N06D32 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

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GOFORD

谷峰半导体

60V N+N Channel TRENCH MOSFET

Power MOSFETs find widespread use across various applications due to their low ON resistance, making them particularly appealing. By minimizing power dissipation, they contribute to cost reduction, smaller form factors, and less cooling requirements, resulting in significant enhancements for electro

GOFORD

谷峰半导体

FCLGA1151

INTEL

英特尔

上传：深圳市英科美电子有限公司

直插

OMRON

欧姆龙

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SOT-23-6

FM/富满

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