600V, SMPS Series N-Channel IGBT

The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been

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Fairchild

仙童半导体

600V, SMPS Series N-Channel IGBT

The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

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Intersil

600V, SMPS Series N-Channel IGBT

The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately • 100kHz Operation at 390V, 30A\n• 200kHz Operation at 390V, 18A\n• 600V Switching SOA Capability\n• Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125°C\n• Low Conduction Loss\n• Temperature Compensating SABER Model www.intersil.com;

Renesas

瑞萨

600V, SMPS Series N-Channel IGBT with

The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderat

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Fairchild

仙童半导体

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel • 100kHz Operation At 390V, 30A\n• 200kHz Operation At 390V, 18A\n• 600V Switching SOA Capability\n• Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125°C\n• Low Conduction Loss\n• Temperature Compensating SABER™ Model www.fairchildsemi.com;

ONSEMI

安森美半导体