600V, SMPS Series N-Channel IGBT with

The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderat

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel • 100kHz Operation At 390V, 30A\n• 200kHz Operation At 390V, 18A\n• 600V Switching SOA Capability\n• Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125°C\n• Low Conduction Loss\n• Temperature Compensating SABER™ Model www.fairchildsemi.com;

ONSEMI

安森美半导体

600V, SMPS Series N-Channel IGBT

The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been

文件：178.25 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

600V, SMPS Series N-Channel IGBT

The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

文件：92.78 Kbytes 页数：8 Pages

Intersil

IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.6V@IC=30A · LowEMI · High ruggedness APPLICATIONS · PFC · Welding · ZCS-converters

文件：327.16 Kbytes 页数：2 Pages

ISC

无锡固电