The G2N4401 is designed for general purpose switching and amplifier applications.

文件：132.46 Kbytes 页数：2 Pages

ETL

亚历电子

NPN EPITAXIAL PLANAR TRANSISTOR

文件：130.8 Kbytes 页数：2 Pages

GTM

勤益投资控股

NPN EPITAXIAL PLANAR TRANSISTOR

GTM

勤益投资控股

NPN EPITAXIAL PLANAR TRANSISTOR

Description The H2N4401 is designed for general purpose switching and amplifier applications. Features • Complementary to H2N4403 • High Power Dissipation : 625 mW at 25°C • High DC Current Gain : 100-300 at 150mA • High Breakdown Voltage : 40 V Min.

文件：40.16 Kbytes 页数：4 Pages

HSMC

华昕

NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor General purpose transistor Collector Emitter Voltage: VCEO = 40 V Collector Dissipation: PC (max) = 625 mW On special request, these transistors can be manufactured in different pin configurations.

文件：87.65 Kbytes 页数：4 Pages

DGNJDZ

南晶电子

Low Power Bipolar Transistors

文件：254.17 Kbytes 页数：7 Pages

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