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HCTS244KTR

RadiationHardenedOctalBuffer/LineDriver,Three-State

Intersil‘sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof

Intersil

Intersil Corporation

HCTS244MS

RadiationHardenedOctalBuffer/LineDriver,Three-State

Description TheIntersilHCTS244MSisaRadiationHardenedNonInvertingOctalBuffer/LineDriver,Three-State,withtwoactive-lowoutputenables. TheHCTS244MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/

Intersil

Intersil Corporation

HCTS244MS

RadiationHardenedOctalBuffer/LineDriver,Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si)/s •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •L

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HCTS244T

RadiationHardenedOctalBuffer/LineDriver,Three-State

Intersil‘sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof

Intersil

Intersil Corporation

HMC-ALH244

GaAsHEMTMMICLOWNOISEAMPLIFIER,24-40GHz

GeneralDescription TheHMC-ALH244isatwostageGaAsMMICHEMTLowNoiseAmplifierdiewhichoperatesbetween24and40GHz.Theamplifierprovides12dBofgain,anoisefigureof3.5dB,andrequiresonly45mAfroma+4Vsupplyvoltage.TheHMC-ALH244amplifierdieisidealforintegrati

Hittite

Hittite Microwave Corporation

HMC-ALH244

ACTIVEBIASCONTROLLER

GeneralDescription HMC981isanactivebiascontrollerthatautomaticallyadjuststhegatevoltageofanexternalamplifiertoachieveconstantbiascurrent.ItcanbeusedtobiasanyenhancementanddepletiontypeamplifiersoperatinginClass-AregimewithDrainvoltagesfrom4Vto12Vanddr

Hittite

Hittite Microwave Corporation

HMC-ALH244

GaAsHEMTMMICLOWNOISEAMPLIFIER,24-40GHz

Hittite

Hittite Microwave Corporation

HMC-ALH244

GaAsHEMTMMICLOWNOISEAMPLIFIER

GeneralDescription TheHMC-ALH244isatwostageGaAsMMICHEMTLowNoiseAmplifierdiewhichoperatesbetween24and40GHz.Theamplifierprovides12dBofgain,anoisefigureof3.5dB,andrequiresonly45mAfroma+4Vsupplyvoltage.TheHMC-ALH244amplifierdieisidealforintegrati

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

IRF244

14Aand13A,275Vand250V,0.28and0.34Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF244

StaticDrain-SourceOn-Resistance

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

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