G21.W Hercules Gen.II Penta Band Cellular Antenna

文件：1.18687 Mbytes 页数：21 Pages

TAOGLAS

Taoglas antenna solutions

料位计

Seetru

丝印：G2100；Package：VQFN-FCRLF；LMG2100R044 100V, 35A GaN Half-Bridge Power Stage

1 Features • Integrated 4.4mΩ half-bridge GaN FETs and driver • 90V continuous, 100V pulsed voltage rating • Package optimized for easy PCB layout • High slew rate switching with low ringing • 5V external bias power supply • Supports 3.3V and 5V input logic levels • Gate driver capable of u

文件：1.37641 Mbytes 页数：28 Pages

TI

德州仪器

丝印：G2181；Package：RQFN；GaAs INTEGRATED CIRCUIT

FEATURES • Supply voltage : VDD = 2.8 to 3.2 V (3.0 V TYP.) • Control voltage : Vcont (H) = 1.5 to VDD (VDD TYP.) : Vcont (L) = 0 to 0.2 V (0 V TYP.) • Low insertion loss : Lins1 = 0.8 dB TYP. @ f = 2.3 to 2.7 GHz, VDD = 3.0 V, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Lins2 = 1.0 dB TYP. @ f = 3.

文件：353.17 Kbytes 页数：12 Pages

RENESAS

瑞萨

丝印：G2181；Package：RQFN；GaAs INTEGRATED CIRCUIT

FEATURES • Supply voltage : VDD = 2.8 to 3.2 V (3.0 V TYP.) • Control voltage : Vcont (H) = 1.5 to VDD (VDD TYP.) : Vcont (L) = 0 to 0.2 V (0 V TYP.) • Low insertion loss : Lins1 = 0.8 dB TYP. @ f = 2.3 to 2.7 GHz, VDD = 3.0 V, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Lins2 = 1.0 dB TYP. @ f = 3.

文件：353.17 Kbytes 页数：12 Pages

RENESAS

瑞萨

丝印：G2193；Package：TQFN；GaAs INTEGRATED CIRCUIT

FEATURES • Supply Voltage : VDD = 2.5 to 3.0 V（2.775V TYP.） • Serial Peripheral Interface SPI Supply Voltage : AUX SPI_VDD (H) = 1.5 to 3.0 V（1.8 V TYP.） : AUX SPI_VDD (L) = −0.3 to 0.3 V（0 V TYP.） • Low Insertion Loss : Lins = 0.4 dB TYP. @ GSM_LB_TX : Lins = 0.6 dB TYP. @ GSM_HB_TX • Harm

文件：540.24 Kbytes 页数：19 Pages

RENESAS

瑞萨

丝印：G2193；Package：TQFN；GaAs INTEGRATED CIRCUIT

FEATURES • Supply Voltage : VDD = 2.5 to 3.0 V（2.775V TYP.） • Serial Peripheral Interface SPI Supply Voltage : AUX SPI_VDD (H) = 1.5 to 3.0 V（1.8 V TYP.） : AUX SPI_VDD (L) = −0.3 to 0.3 V（0 V TYP.） • Low Insertion Loss : Lins = 0.4 dB TYP. @ GSM_LB_TX : Lins = 0.6 dB TYP. @ GSM_HB_TX • Harm

文件：540.24 Kbytes 页数：19 Pages

RENESAS

瑞萨

丝印：G210P06；Package：PPAK5-8L；Single P-Channel Enhancement Mode MOSFET

文件：722.92 Kbytes 页数：10 Pages

HUAYI

华羿微电

丝印：G210P06；Package：TO-252-2L；P-Channel Enhancement Mode MOSFET

文件：1.32129 Mbytes 页数：11 Pages

HUAYI

华羿微电

丝印：G210P06；Package：TO-251-3L；P-Channel Enhancement Mode MOSFET

文件：1.32129 Mbytes 页数：11 Pages

HUAYI

华羿微电