首页 >G20N60C3>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

HGTP20N60C3R

40A,600V,RuggedUFSSeriesN-ChannelIGBTs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

ISPP20N60C3

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.19Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perfor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISPW20N60C3

iscN-ChannelMOSFETTransistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤190mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPA20N60C3

CoolMOSPowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPA20N60C3

NewrevolutionaryhighvoltagetechnologyWorldwidebestRDS(on)inTO220Ultralowgatecharge

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPA20N60C3

iscN-ChannelMOSFETTransistor

•FEATURES •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPB20N60C3

CoolMOSPowerTransistorFeaturenewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPB20N60C3

CoolMOSPowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPB20N60C3

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPB20N60C3

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    G20N60C3

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    45A, 600V, UFS Series N-Channel IGBT

供应商型号品牌批号封装库存备注价格
哈里斯
23+
TO-247
3000
全新原装
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FSC
20+
TO-220
38900
原装优势主营型号-可开原型号增税票
询价
FAIRCHILD/仙童
22+
TO-220
6000
十年配单,只做原装
询价
FAIRCHILD/仙童
23+
OR
350000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
哈理斯
TO-247
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
FAIRCHILD/仙童
22+
TO-220
25000
只做原装进口现货,专注配单
询价
FAIRCHILD
25+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
FAIRCHILD/仙童
25+
TO-220
10
原装正品,假一罚十!
询价
HARRIS
24+
TO-220
10000
询价
更多G20N60C3供应商 更新时间2025-7-18 9:12:00