MTV20N50E

PowerFieldEffectTransistor

MTV20N50E

TMOSPOWERFET20AMPERES500VOLTSRDS(on)=0.240OHM

TMOSE−FETPowerFieldEffectTransistorD3PAKforSurfaceMount N−ChannelEnhancement−ModeSiliconGate TheD3PAKpackagehasthecapabilityofhousingthelargestchipsizeofanystandard,plastic,surfacemountpowersemiconductor.Thisallowsittobeusedinapplicationsthatrequiresurfa

MTV20N50E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.24Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTW20N50E

TMOSPOWERFET20AMPERES500VOLTSRDS(on)=0.24OHM

TMOSE−FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N−ChannelEnhancement−ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMO

MTW20N50E

N?묬hannelPowerMOSFET

MTW20N50E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.24Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTY20N50E

N?묬hannelPowerMOSFET

NCE20N50

SuperJunctionMOSFET

NCE20N50F

SuperJunctionMOSFET

PHW20N50E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. FEATURES •Repet