丝印：G100P04；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G100P04KA uses advanced trench technology to provid eexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.04519 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G100P04H-HZR；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G100P04KH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：652.48 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

-40V P Channel TRENCH MOSFET

GOFORD

谷峰半导体

Product Scout Automotive

文件：5.67799 Mbytes 页数：6 Pages

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP100P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID

文件：190.95 Kbytes 页数：7 Pages

NEC

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Product Scout Automotive

文件：5.67799 Mbytes 页数：6 Pages

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