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GE01N60

N-CHANNELENHANCEMENTMODEPOWERMOSFET

ETLE-Tech Electronics LTD

亚历电子亚历电子有限公司

GE01N60

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheGE01N60providethedesignerwiththebestcombinationoffastswitching. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplications.ThedeviceissuitedforDC-DC,DC-ACconvertersfortelecom,industrialandconsumerenvironment. Features *Dynami

GTMGTM CORPORATION

勤益投资控股勤益投资控股股份有限公司

GI01N60

N-CHANNELENHANCEMENTMODEPOWERMOSFET

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

GI01N60

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTMGTM CORPORATION

勤益投资控股勤益投资控股股份有限公司

GJ01N60

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheGJ01N60providethedesignerwiththebestcombinationoffastswitching. TheTO-252packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsand suitedforAC/DCconverters. Features *Dynamicdv/dtRating *SimpleDriveRequir

GTMGTM CORPORATION

勤益投资控股勤益投资控股股份有限公司

GM01N60D/U

MinisizeofDiscretesemiconductorelements

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

GM01N60DSLASHU

MinisizeofDiscretesemiconductorelements

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

H01N60

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

H01N60I

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

H01N60J

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

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