丝印：FZT1048A；Package：SOT-223；17.5V NPN MEDIUM POWER HIGH GAIN TRANSISTOR

文件：676.96 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：FZT1048A；Package：SOT-223；17.5V NPN MEDIUM POWER HIGH GAIN TRANSISTOR

文件：676.96 Kbytes 页数：7 Pages

DIODES

美台半导体

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEO = 17.5V * 5 Amp Continuous Current * 20 Amp Pulse Current * Low Saturation Voltage * High Gain * Extremely Low Equivalent On-resistance; RCE(sat) = 50mΩ at 5A

文件：132.01 Kbytes 页数：3 Pages

Zetex

NPN Silicon Planar Medium Power High Gain Transistor

■ Features ● Collector Current Capability IC=5A ● Collector Emitter Voltage VCEO=17.5V ● Low Saturation Voltage

文件：38.7 Kbytes 页数：2 Pages

KEXIN

科信电子

NPN SILICON PLANAR MEDIUM POWER

Features • BVCEO > 17.5V • BVCES > 50V • IC = 5A High Continuous Collector Current • ICM = 20A Peak Pulse Current • Low Saturation Voltage VCE(sat)

文件：143.63 Kbytes 页数：3 Pages

DIODES

美台半导体

17.5V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223

Features • BVCEO > 17.5V • BVCES > 50V • IC = 5A High Continuous Collector Current • ICM = 20A Peak Pulse Current • Low Saturation Voltage VCE(sat)

文件：488.3 Kbytes 页数：7 Pages

DIODES

美台半导体

17.5V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223

Features • BVCEO > 17.5V • BVCES > 50V • IC = 5A High Continuous Collector Current • ICM = 20A Peak Pulse Current • Low Saturation Voltage VCE(sat)

文件：488.3 Kbytes 页数：7 Pages

DIODES

美台半导体

17.5V NPN MEDIUM POWER HIGH GAIN TRANSISTOR

文件：676.96 Kbytes 页数：7 Pages

DIODES

美台半导体

NPN Transistors

文件：820.52 Kbytes 页数：3 Pages

KEXIN

科信电子

17.5V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223

文件：506.28 Kbytes 页数：7 Pages

DIODES

美台半导体