HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS –30V • rDS (ON) (MAX) 0.13Ω • ID –20A • Integrated Fast Recovery Dio

文件：50.86 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=-20A@ TC=25℃ ·Drain Source Voltage -VDSS= -30V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.13Ω(Max)@VGS=-10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive

文件：383.08 Kbytes 页数：2 Pages

ISC

无锡固电

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 0.13 Ω • ID : – 20 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

文件：209.61 Kbytes 页数：7 Pages

RENESAS

瑞萨

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS –60V • rDS (ON) (MAX) 97mΩ • ID –20A • Integrated Fast Recovery Diod

文件：51.3 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS –60V • rDS (ON) (MAX) 97mΩ • ID –20A • Integrated Fast Recovery Diod

文件：56.63 Kbytes 页数：4 Pages

POWEREX

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 60 V • rDS(ON) (max) : 97 mΩ • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 50 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

文件：174.67 Kbytes 页数：7 Pages

RENESAS

瑞萨

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 60 V • rDS(ON) (max) : 97 mΩ • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 50 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

文件：174.67 Kbytes 页数：7 Pages

RENESAS

瑞萨

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS –100V • rDS (ON) (MAX) 0.26Ω • ID –20A • Integrated Fast Recovery Diod

文件：51.37 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS –100V • rDS (ON) (MAX) 0.26Ω • ID –20A • Integrated Fast Recovery Diod

文件：56.72 Kbytes 页数：4 Pages

POWEREX

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS: – 100 V • rDS(ON) (max): 0.26 Ω • ID: – 20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

文件：174.49 Kbytes 页数：7 Pages

RENESAS

瑞萨