IRFR3910

PowerMOSFET(Vdss=100V,Rds=0.115ohm,Id=16A)

IRFR3910

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤115mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

IRFR3910

TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.

Features VDS(V)=100V ID=16A(VGS=10V) RDS(ON)=115mW(VGS=10V)

IRFR3910

MOSFET

Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infrared,orwavesolderingtechniques. Powerdissipationlevelsupto1.5watts arepossibleintypicalsurfacemountapplications. Features VDS(V)=100V ID=16A(VGS=10V) RDS(ON)=115mW(VGS=10V)

IRFR3910PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRFR3910PBF

ULTRALOWONRESISTANCE

IRFR3910PBF

UltraLowOn-Resistance

IRFR3910PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRFR3910TR

UltraLowOn-Resistance

IRFR3910TR

TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.

Features VDS(V)=100V ID=16A(VGS=10V) RDS(ON)=115mW(VGS=10V)