CEB22N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,21.8A,RDS(ON)=50mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant. RDS(ON)=60mW@VGS=5V.

CEP22N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,21.8A,RDS(ON)=50mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant. RDS(ON)=60mW@VGS=5V.

NTB22N06

N?묬hannelEnhancement?묺odeSiliconGate

NTB22N06L

N?묬hannelPowerMOSFET

NTP22N06

N?묬hannelEnhancement?묺odeSiliconGate

NTP22N06L

N?묬hannelPowerMOSFET

STK22N06

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.048Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION