MMBT7002

N-ChannelEnhancementModeFieldEffectTransistor

Features •HighdensitycelldesignforlowRDS(ON) •Voltagecontrolledsmallsignalswitching •Highsaturationcurrentcapability •Highspeedswitching

MMBT7002

N-ChannelEnhancementModeFieldEffectTransistor

Features •HighdensitycelldesignforlowRDS(ON) •Voltagecontrolledsmallsignalswitching •Highsaturationcurrentcapability •Highspeedswitching

MMBT7002A

N-ChannelEnhancementModeFieldEffectTransistor

N-ChannelEnhancementModeFieldEffectTransistor

MMBT7002DW

N-ChannelEnhancementModeFET

Features Twotransistorsinonepackage Fastswitchingtimes ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Signalprocessing,Logiclevelconverter,Drivers Commercialgrade1) MechanicalData1) Tapedandreeled3000/7“ Weightapprox.0.01

MMBT7002DW

N-ChannelEnhancementModeFET

MMBT7002K

N-ChannelEnhancementModeFETwithprotectedGate

Features ESDprotectedGate Fastswitchingtimes ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Signalprocessing,Logiclevelconverter,DriversCommercialgrade Suffix-Q:AEC-Q101compliant1) Suffix-AQ:inAEC-Q101qualification1) Mechanical

MMBT7002K

N-ChannelEnhancementModeFieldEffectTransistor

Features •LowonresistanceRDS(ON) •Lowgatethresholdvoltage •Lowinputcapacitance •ESDprotectedupto2KV

MMBT7002K

N-ChannelEnhancementModeFET

MMBT7002K

N-ChannelEnhancementModeFET

MMBT7002KDW-AH

N-ChannelEnhancementModeFieldEffectTransistor

Features •LowonresistanceRDS(ON) •Lowgatethresholdvoltage •Lowinputcapacitance •ESDprotectedupto2KV •AEC-Q101QualifiedandPPAPCapable •HalogenandAntimonyFree(HAF),RoHScompliant