5.0 Amps, 800 Volts N-Channel MOS -FET

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N-Channel Enhancement Mode Field Effect Transistor

General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

文件：665.77 Kbytes 页数：6 Pages

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华汕电子器件

Superior Avalanche Rugged Technology

FEATURES ❐ Originative New Design ❐ Superior Avalanche Rugged Technology ❐ Robust Gate Oxide Technology ❐ Very Low Intrinsic Capacitances ❐ Excellent Switching Characteristics ❐ Unrivalled Gate Charge : 30 nC (Typ.) ❐ Extended Safe Operating Area ❐ Lower RDS(ON) : 2.0 Ω (Typ.) @VGS=10V ❐

文件：218.13 Kbytes 页数：8 Pages

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Superior Avalanche Rugged Technology

文件：207.86 Kbytes 页数：7 Pages

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