HY3810P

N-ChannelEnhancementModeMOSFET

Features 100V/180A RDS(ON)=m(typ.)@VGS=10V ReliableandRugged LeadFreeandGreenDevicesAvailable (RoHSCompliant) 100avalanchetested 5.0 Applications PowerManagementforInverterSystems. Switchingapplication

HY3810PM

N-ChannelEnhancementModeMOSFET

Features 100V/180A RDS(ON)=m(typ.)@VGS=10V ReliableandRugged LeadFreeandGreenDevicesAvailable (RoHSCompliant) 100avalanchetested 5.0 Applications PowerManagementforInverterSystems. Switchingapplication

HY3810PS

N-ChannelEnhancementModeMOSFET

Features 100V/180A RDS(ON)=m(typ.)@VGS=10V ReliableandRugged LeadFreeandGreenDevicesAvailable (RoHSCompliant) 100avalanchetested 5.0 Applications PowerManagementforInverterSystems. Switchingapplication

IR3810MPBF

HIGHLYINTEGRATED12AWIDE-INPUTVOLTAGE,SYNCHRONOUSBUCKREGULATOR

IR3810MPBF

SupIRBuckTMHIGHLYINTEGRATED12AWIDE-INPUTVOLTAGE,SYNCHRONOUSBUCKREGULATOR

IR3810MPBF

HIGHLYINTEGRATED12AWIDE-INPUTVOLTAGE,SYNCHRONOUSBUCKREGULATOR

IRDC3810

TheIR3810isasynchronousbuckconverter,providingacompact,highperformanceandflexiblesolutioninasmall5mmx6mmPowerQFNpackage.

IRFPS3810

PowerMOSFET(Vdss=100V,Rds(on)=0.009ohm,Id=170A??

Description TheHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,provid

IRFPS3810PBF

HEXFET짰PowerMOSFET

Description TheHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,provid

IRFPS3810PBF

AdvancedProcessTechnology