FTD2017A技术资料参数供应价格安森美半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
FTD2017A	文件：1.08648 Mbytes Page：8 Pages	Dual N-Channel 25-V (D-S) MOSFET 文件：1.08648 Mbytes 页数：8 Pages	VBSEMI 微碧半导体	VBSEMI
FTD2017A	文件：300 bytes Page：1 Pages	Nch+Nch	ONSEMI 安森美半导体	ONSEMI
FTD2017C	文件：314.75 Kbytes Page：4 Pages	N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance • 2.5V drive • Mount heigt 1.1mm • Composite type, facilitating high-density mounting • Drain common specifications • Halogen free compliance 文件：314.75 Kbytes 页数：4 Pages	SANYO 三洋	SANYO
FTD2017M	文件：57.39 Kbytes Page：4 Pages	N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance. • 2.5V drive. • Mount height 1.1mm. • Composite type, facilitating high-density mounting. • Drain common specifications. 文件：57.39 Kbytes 页数：4 Pages	SANYO 三洋	SANYO
FTD2017R	文件：54.36 Kbytes Page：4 Pages	N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • Low ON-resistance. • 2.5V drive. • Mount height 1.1mm. • Composite type, facilitating high-density mounting. • Drain common specifications. 文件：54.36 Kbytes 页数：4 Pages	SANYO 三洋	SANYO

更多FTD2017A供应商更新时间2026-1-17 16:30:00