K12A60U

FieldEffectTransistorSiliconNChannelMOSType(DTMOS??

SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.36Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=7.0S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=600V) •Enhancement-mode:Vth=3.0to5.0V(VDS=10V,ID=1mA)

K12A60W

MOSFETsSiliconN-ChannelMOS(DTMOS??

Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.265Ω(typ.)byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.6mA) Applications •SwitchingVoltageRegulators

STF12A60

Bi-DirectionalTriodeThyristor

STF12A60

Bi-DirectionalTriodeThyristor

STP12A60

Bi-DirectionalTriodeThyristor

STP12A60

Bi-DirectionalTriodeThyristor

SUN12A60F

NewGenerationN-ChPowerMOSFET

TF12A60

RepetitivePeakOff-StateVoltage:600V

TK12A60D

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TK12A60D

SwitchingRegulatorApplications

SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=0.45Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=7.5S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=600V) •Enhancement-mode:Vth=2.0to4.0V(VDS=10V,ID=1mA)