INA818

INA630Precision,126dBCMRR,IndirectCurrentFeedbackInstrumentationAmplifier

1Features •Optimizedforcostandsizesensitiveapplications •Super-betabipolarprecision: –Highcommon-moderejection:126dB (minimum)forG=20V/Vto1000V/V –Lowoffsetvoltage:50μV(typical),350μV (maximum) –Lowoffsetvoltagedrift:0.5μV/ºC(typical), 2μV/°C(maximum) –L

INA818ID

35-uVOffset,8-nV/?숰zNoise,Low-Power,PrecisionInstrumentationAmplifier

INA818IDR

35-uVOffset,8-nV/?숰zNoise,Low-Power,PrecisionInstrumentationAmplifier

KC818

NPNSiliconAFTransistors

Features ●ForgeneralAFapplications. ●Highcollectorcurrent. ●Highcurrentgain. ●Lowcollector-emittersaturationvoltage.

KC818A

NPNSiliconAFTransistors

NPNSiliconAFTransistors Features ForgeneralAFapplications. Highcollectorcurrent. Highcurrentgain. Lowcollector-emittersaturationvoltage.

KC818W

NPNSiliconAFTransistors

NPNSiliconAFTransistors Features ForgeneralAFapplications. Highcollectorcurrent. Highcurrentgain. Lowcollector-emittersaturationvoltage.

KYL-818

8-waywirelessON-OFFModule

L-818

HighBias/HighLAudioFrequencyInductors

HighBias/HighLAudioFrequencyInductors Multi-PurposeApplications: BatteryFeed HoldingCoil SurgeRetardCoil

L818HW

HIGHCURRENTMOLDEDPOWERINDUCTORS

LT818

PhotoDMOS-FETRelay

Description TheLT818isa1FormAsolidstaterelayin6pinDIPpackagethatemploysoptically coupledMOSFETtechnologytoprovide3750V/5000Vofinputtooutputisolation.The opticallycoupledinputiscontrolledbyahighlyefficientGaAlAsinfraredLEDand MOSFETsontheoutputside.