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H05N60

N-ChannelPowerFieldEffectTransistor

Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

H05N60E

N-ChannelPowerFieldEffectTransistor

Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

H05N60F

N-ChannelPowerFieldEffectTransistor

Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

MCU05N60

N-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCU05N60A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MCU05N60A

N-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MGS05N60D

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisIGBTcontainsabuilt–infreewheelingdiodeandagateprotectionzener.Fastswitchingcharacteristicsresultinefficientoperationathigherfrequencies. •Built–InFreeWheelingDiode •Built–InGateProtecti

MotorolaMotorola, Inc

摩托罗拉

MGS05N60D

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisIGBTcontainsabuilt–infreewheelingdiodeandagateprotectionzener.Fastswitchingcharacteristicsresultinefficientoperationathigherfrequencies. •Built–InFreeWheelingDiode •Built–InGateProtection

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMG05N60D

InsulatedGateBipolarTransistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMG05N60D

POWERLUXIGBT

ThisIGBTcontainsabuilt–infreewheelingdiodeandagateprotectionzener.Fastswitchingcharacteristicsresultinefficientoperationathigherfrequencies. •Built–InFreeWheelingDiode •Built–InGateProtectionZenerDiode •IndustryStandardPackage(SOT223) •HighSpeedEoff:Typic

MotorolaMotorola, Inc

摩托罗拉

SSD05N60J

N-ChEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

供应商型号品牌批号封装库存备注价格
IPS
2048+
TO-220F
9851
只做原装正品现货!或订货假一赔十!
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IPS
1708+
TO-220F
8500
只做原装进口,假一罚十
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VB
2019
TO-220F1
55000
绝对原装正品假一罚十!
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IR
23+
TO-TO-220F
12300
全新原装真实库存含13点增值税票!
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IPS
2020+
TO-220F
50150
公司代理品牌,原装现货超低价清仓!
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I
TO-220F
22+
6000
十年配单,只做原装
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IPS
23+
TO-220F
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
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原装正品
23+
TO-220F
60770
##公司主营品牌长期供应100%原装现货可含税提供技术
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IPS
22+
TO-220F
10000
原装现货,假一赔十
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I
22+
TO-220F
25000
只做原装进口现货,专注配单
询价
更多FTA05N60D供应商 更新时间2024-9-24 18:34:00