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IRA-231

AluminumRackCabinet

SOVICO

SOVICO corp.

IRF231

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF231

8.0Aand9.0A,150Vand200V,0.4and0.6Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF231

N-CHANNELPOWERMOSFETS

FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半导体

IRF231

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF231

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF231

HighPower,HighSpeedApplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF231

N-ChannelPowerMosfets

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRFS231

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFS231

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6.2A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
24+
SMD
5500
一级代理原装现货假一罚十
询价
原厂
NA
5500
一级代理 原装正品假一罚十价格优势长期供货
询价
FTDI
19+
71955
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
TSSOP-28
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
FTDI
18+
SSOP28
85600
保证进口原装可开17%增值税发票
询价
16
询价
FTDI
20+
QFP
500
样品可出,优势库存欢迎实单
询价
BB/TI
23+
SOP16
69820
终端可以免费供样,支持BOM配单!
询价
FTDI
24+
QFP
6500
全新原装
询价
NA
23+
NA
26094
10年以上分销经验原装进口正品,做服务型企业
询价
更多FT231XS-X供应商 更新时间2025-6-11 17:06:00