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GP100-06

10AGENERALPURPOSEPLASTICRECTIFIER

FRONTIER

Frontier Electronics

MDC100-06

PowerDiodeModuleMDC100seriesaredesignedforvariousRectifiercircuits

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

PO100-06

75,100and120AmpereBridgesoProvides0.40C/WJunction-to-Case,ThermalResistance

75,100and120AmpereBridgesProvides0.40°C/WJunction-to-Case,ThermalResistance

edi

Electronic devices inc.

POT100-06

75,100and120AmpereThreePhaseBridgesoProvides0.23C/WJunction-to-Case,ThermalResistance

75,100and120AmpereThreePhaseBridges Provides0.23°C/WJunction-to-Case,ThermalResistance

edi

Electronic devices inc.

PSHI100-06

IGBTModuleH-BridgeConfiguration

POWERSEM

Powersem GmbH,

PSIG100-06

IGBTModule

POWERSEM

Powersem GmbH,

PSII100-06

IGBTModule

POWERSEM

Powersem GmbH,

PSIPM100-06

Converter-Brake-InverterModule

POWERSEM

Powersem GmbH,

PT-100-06

TransformersPulse,TriggerType

FEATURES •IntegratedServicesDigitalNetworktransformersthatprovide   isolationforthelinecardandterminalinconjunctionwithboth   “S/T”and“U”interfaces. •DesignedtomeettheCCITT1.430pulsewaveformtemplate   requirements. •IsolationvoltagelevelsavailableforU.S

VishayVishay Siliconix

威世科技威世科技半导体

SBJ100-06J

SchottkyBarrierDiode(TwinType쨌CathodeCommon)60V,10ARectifier

60V,10ARectifier Features •Smallreversecurrent(IRtyp=5µA)duetoadoptionofMRJ(MultiRefinedPNJunction)structure. •Lowforwardvoltage(VFtyp=0.55V). •Hightemperatureoperationispossible(Tj=150°C). •Highsurgebreakdownvoltage. Applications •Highfrequencyrectificati

SANYOSanyo Semicon Device

三洋三洋电机株式会社

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