型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
丝印:FSY;Package:SMB;Automotive 600 W Transil Description The SM6TY Transil series has been designed to protect sensitive automotive circuits against surges defined in ISO 7637-2 and against electrostatic discharges according to IEC 61000-4-2 and ISO 10605. The planar technology makes this device compatible with high-end circuits where low l 文件:228.14 Kbytes 页数:12 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
丝印:FSYYZ;Package:TSOT23-6;36V/24V/19V High Efficiency Step-Up LED Driver with PWM Control Features Wide output range: up to 10 series LEDs Integrated 40V high current switch (800mA limit) High efficiency PWM converter (up to 90) Low 200mV feedback voltage High accuracy across full load range VIN range: 2.7V to 5.5V LED open-circuit (OVP) protection − KTD2536: 3 文件:638.64 Kbytes 页数:15 Pages | KINETIC 芯凯电子 | KINETIC | ||
丝印:FSYYZ;Package:TSOT23-6;36V/24V/19V High Efficiency Step-Up LED Driver with PWM Control Features Wide output range: up to 10 series LEDs Integrated 40V high current switch (800mA limit) High efficiency PWM converter (up to 90) Low 200mV feedback voltage High accuracy across full load range VIN range: 2.7V to 5.5V LED open-circuit (OVP) protection − KTD2536: 3 文件:638.64 Kbytes 页数:15 Pages | KINETIC 芯凯电子 | KINETIC | ||
丝印:FSYYZ;Package:TSOT23-6;36V/24V/19V High Efficiency Step-Up LED Driver with PWM Control Features Wide output range: up to 10 series LEDs Integrated 40V high current switch (800mA limit) High efficiency PWM converter (up to 90) Low 200mV feedback voltage High accuracy across full load range VIN range: 2.7V to 5.5V LED open-circuit (OVP) protection − KTD2536: 3 文件:638.64 Kbytes 页数:15 Pages | KINETIC 芯凯电子 | KINETIC | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev 文件:57.54 Kbytes 页数:8 Pages | Intersil | Intersil | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev 文件:57.54 Kbytes 页数:8 Pages | Intersil | Intersil | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev 文件:57.54 Kbytes 页数:8 Pages | Intersil | Intersil | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev 文件:57.54 Kbytes 页数:8 Pages | Intersil | Intersil | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev 文件:57.54 Kbytes 页数:8 Pages | Intersil | Intersil | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev 文件:57.54 Kbytes 页数:8 Pages | Intersil | Intersil |
详细参数
- 型号:
FSY
- 功能描述:
TVS 二极管 - 瞬态电压抑制器 600 W 4kW Transil 6V to 70V Uni
- RoHS:
否
- 制造商:
Vishay Semiconductors
- 极性:
Bidirectional
- 击穿电压:
58.9 V
- 钳位电压:
77.4 V
- 峰值浪涌电流:
38.8 A
- 封装/箱体:
DO-214AB
- 最小工作温度:
- 55 C
- 最大工作温度:
+ 150 C
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STMicroelectronics |
24+ |
NA |
3585 |
进口原装正品优势供应 |
询价 | ||
ST |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
22+ |
NA |
3000 |
加我QQ或微信咨询更多详细信息, |
询价 | |||
ST/意法半导体 |
2021+ |
DO-214AA-2 |
7600 |
原装现货,欢迎询价 |
询价 | ||
ST/意法半导体 |
24+ |
DO-214AA-2 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
ST/意法半导体 |
21+ |
DO-214AA-2 |
8860 |
只做原装,质量保证 |
询价 | ||
ST/意法半导体 |
2020+ |
DO-214AA-2 |
7600 |
只做原装正品,卖元器件不赚钱交个朋友 |
询价 | ||
ST/意法半导体 |
23+ |
DO-214AA-2 |
8860 |
原装正品,支持实单 |
询价 | ||
ST/意法半导体 |
22+ |
DO-214AA-2 |
6000 |
进口原装,优势现货 |
询价 | ||
ST/意法半导体 |
21+ |
DO-214AA-2 |
10000 |
原装公司现货 |
询价 |
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