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SM6T75AY

丝印:FSY;Package:SMB;Automotive 600 W Transil

Description The SM6TY Transil series has been designed to protect sensitive automotive circuits against surges defined in ISO 7637-2 and against electrostatic discharges according to IEC 61000-4-2 and ISO 10605. The planar technology makes this device compatible with high-end circuits where low l

文件:228.14 Kbytes 页数:12 Pages

STMICROELECTRONICS

意法半导体

KTD2536BEHD-TR

丝印:FSYYZ;Package:TSOT23-6;36V/24V/19V High Efficiency Step-Up LED Driver with PWM Control

Features  Wide output range: up to 10 series LEDs  Integrated 40V high current switch (800mA limit)  High efficiency PWM converter (up to 90)  Low 200mV feedback voltage  High accuracy across full load range  VIN range: 2.7V to 5.5V  LED open-circuit (OVP) protection − KTD2536: 3

文件:638.64 Kbytes 页数:15 Pages

KINETIC

芯凯电子

KTD2536CEHD-TR

丝印:FSYYZ;Package:TSOT23-6;36V/24V/19V High Efficiency Step-Up LED Driver with PWM Control

Features  Wide output range: up to 10 series LEDs  Integrated 40V high current switch (800mA limit)  High efficiency PWM converter (up to 90)  Low 200mV feedback voltage  High accuracy across full load range  VIN range: 2.7V to 5.5V  LED open-circuit (OVP) protection − KTD2536: 3

文件:638.64 Kbytes 页数:15 Pages

KINETIC

芯凯电子

KTD2536EHD-TR

丝印:FSYYZ;Package:TSOT23-6;36V/24V/19V High Efficiency Step-Up LED Driver with PWM Control

Features  Wide output range: up to 10 series LEDs  Integrated 40V high current switch (800mA limit)  High efficiency PWM converter (up to 90)  Low 200mV feedback voltage  High accuracy across full load range  VIN range: 2.7V to 5.5V  LED open-circuit (OVP) protection − KTD2536: 3

文件:638.64 Kbytes 页数:15 Pages

KINETIC

芯凯电子

FSYA150D

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev

文件:57.54 Kbytes 页数:8 Pages

Intersil

FSYA150D1

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev

文件:57.54 Kbytes 页数:8 Pages

Intersil

FSYA150D3

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev

文件:57.54 Kbytes 页数:8 Pages

Intersil

FSYA150R

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev

文件:57.54 Kbytes 页数:8 Pages

Intersil

FSYA150R1

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev

文件:57.54 Kbytes 页数:8 Pages

Intersil

FSYA150R3

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Ev

文件:57.54 Kbytes 页数:8 Pages

Intersil

详细参数

  • 型号:

    FSY

  • 功能描述:

    TVS 二极管 - 瞬态电压抑制器 600 W 4kW Transil 6V to 70V Uni

  • RoHS:

  • 制造商:

    Vishay Semiconductors

  • 极性:

    Bidirectional

  • 击穿电压:

    58.9 V

  • 钳位电压:

    77.4 V

  • 峰值浪涌电流:

    38.8 A

  • 封装/箱体:

    DO-214AB

  • 最小工作温度:

    - 55 C

  • 最大工作温度:

    + 150 C

供应商型号品牌批号封装库存备注价格
STMicroelectronics
24+
NA
3585
进口原装正品优势供应
询价
ST
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
22+
NA
3000
加我QQ或微信咨询更多详细信息,
询价
ST/意法半导体
2021+
DO-214AA-2
7600
原装现货,欢迎询价
询价
ST/意法半导体
24+
DO-214AA-2
6000
全新原装深圳仓库现货有单必成
询价
ST/意法半导体
21+
DO-214AA-2
8860
只做原装,质量保证
询价
ST/意法半导体
2020+
DO-214AA-2
7600
只做原装正品,卖元器件不赚钱交个朋友
询价
ST/意法半导体
23+
DO-214AA-2
8860
原装正品,支持实单
询价
ST/意法半导体
22+
DO-214AA-2
6000
进口原装,优势现货
询价
ST/意法半导体
21+
DO-214AA-2
10000
原装公司现货
询价
更多FSY供应商 更新时间2025-8-14 10:06:00