型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
FSS430D | 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件:46.38 Kbytes 页数:8 Pages | Intersil | Intersil | |
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件:46.38 Kbytes 页数:8 Pages | Intersil | Intersil | ||
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件:46.38 Kbytes 页数:8 Pages | Intersil | Intersil | ||
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件:46.38 Kbytes 页数:8 Pages | Intersil | Intersil | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 文件:58.2 Kbytes 页数:8 Pages | Intersil | Intersil | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 文件:58.2 Kbytes 页数:8 Pages | Intersil | Intersil |
详细参数
- 型号:
FSS430D
- 制造商:
INTERSIL
- 制造商全称:
Intersil Corporation
- 功能描述:
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
24+ |
DIP |
200 |
询价 | ||||
SANYO/三洋 |
23+ |
SOP-8 |
3040 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
SANYO三洋 |
23+ |
SOP-8 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
SANYO三洋 |
20+ |
SOP-8 |
2588 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
SANYO |
SOP-8 |
35500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
ON |
22+ |
6000 |
代理原装正品 |
询价 | |||
SANYO三洋 |
24+ |
SOP-8 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 | ||
SANYO/三洋 |
2008 |
SOP8 |
1000 |
原装现货 |
询价 | ||
SANYO |
23+ |
SOP |
36537 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 |
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