FSJ9055R1中文资料PDF规格书
FSJ9055R1规格书详情
Description
The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
Features
• 55A, -60V, rDS(ON) = 0.029Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80 of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80 BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 6.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
产品属性
- 型号:
FSJ9055R1
- 制造商:
INTERSIL
- 制造商全称:
Intersil Corporation
- 功能描述:
55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
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---|---|---|---|---|---|---|---|
AMP |
2308+ |
193187 |
一级代理,原装正品,公司现货! |
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SENSITRO |
24+25+/26+27+ |
TO-59.高频管 |
18800 |
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AMIS |
22+ |
PLCC-20P |
2000 |
进口原装!现货库存 |
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THOMASBETTS/ANSLEY |
新 |
3455 |
全新原装 货期两周 |
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INFINEON |
23+ |
8000 |
只做原装现货 |
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TOKO |
2021+ |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
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Taiyo Yuden |
21+ |
300 |
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CUIINC |
21+ROHS |
SIPDIP |
56688 |
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23+ |
TO220 |
424 |
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CUI |
22+ |
NA |
170 |
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询价 |