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FSJ260D1

44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

文件:46.7 Kbytes 页数:8 Pages

INTERSIL

FSPYC260D1

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star

文件:83.67 Kbytes 页数:8 Pages

INTERSIL

FSYC260D1

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi

文件:48.83 Kbytes 页数:8 Pages

INTERSIL

GRB260D1

GRB Series Full Size Sealed Rocker Switches

文件:170.56 Kbytes 页数:2 Pages

CWIND

详细参数

  • 型号:

    FSJ260D1

  • 制造商:

    INTERSIL

  • 制造商全称:

    Intersil Corporation

  • 功能描述:

    44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

供应商型号品牌批号封装库存备注价格
H
24+
TO-220
1500
AI芯片,车规MCU原装现货/为新能源汽车电子行业采购保驾护航
询价
H
24+
TO-220
185
进口原装正品优势供应
询价
H
QQ咨询
TO-220
64
全新原装 研究所指定供货商
询价
H
2318+
TO-220
4862
只做进口原装!假一赔百!自己库存价优!
询价
ISL
23+
65480
询价
24+
N/A
52000
一级代理-主营优势-实惠价格-不悔选择
询价
TE
2026+
SMT
300000
济德96T0-28262替代FSK-11.25A-20
询价
TE
2026+
SMT
300000
济德97T0-01547替代FSK-11A-20
询价
AMIS
22+
PLCC-20P
2000
进口原装!现货库存
询价
TE Connectivity
2025
1000
全新、原装
询价
更多FSJ260D1供应商 更新时间2026-4-14 16:24:00