HybridPACK™ Drive G2 module with SiC MOSFET

Features • Electrical features - VDSS = 1200 V - IDN = 390 A - New semiconductor material - silicon carbide - Low RDS,on - Low switching losses - Low Qg and Crss - Low inductive design - Tvj,op = 175°C - Short-time extended operation temperature Tvj,op = 200 °C • Mechanical features -

文件：1.65193 Mbytes 页数：20 Pages

Infineon

英飞凌

HybridPACK™ Drive G2 module with SiC MOSFET

Features • Electrical features - VDSS = 1200 V - IDN = 390 A - New semiconductor material - silicon carbide - Low RDS,on - Low switching losses - Low Qg and Crss - Low inductive design - Tvj,op = 175°C - Short-time extended operation temperature Tvj,op = 200 °C • Mechanical features -

文件：1.65193 Mbytes 页数：20 Pages

Infineon

英飞凌

Automotive IGBT & CoolSiC™ MOSFET Modules

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Infineon

英飞凌

DIP-5

VishayVishay Siliconix

威世威世科技公司

上传：深圳市神舟芯电子科技有限公司

IGBT

欧佩克

上传：深圳市博浩通科技有限公司