FS02MR12A8MA2B中文资料英飞凌数据手册PDF规格书

特性 Features

• Electrical features

- VDSS = 1200 V

- IDN = 390 A

- New semiconductor material - silicon carbide

- Low RDS,on

- Low switching losses

- Low Qg and Crss

- Low inductive design

- Tvj,op = 175°C

- Short-time extended operation temperature Tvj,op = 200 °C

• Mechanical features

- 4.2 kV DC 1 second insulation

- High creepage and clearance distances

- Compact design

- High power density

- Direct-cooled PinFin base plate

- High-performance Si3N4 ceramic

- Guiding elements for PCB and cooler assembly

- Integrated temperature sensing diode

- PressFIT contact technology

- RoHS compliant, lead-free

- UL 94 V0 module frame