| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
.100IDCSOCKET.100X.100[2.54X2.54]CENTERLINE | ADAM-TECHAdam Technologies, Inc. 亚当科技亚当科技股份有限公司 | ADAM-TECH | ||
4A,250V,0.700Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
4A,250V,0.700Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
4A,250V,0.700Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
DC/DCConverterApplications Features •LowON-resistance. •4.0Vdrive. •Ultrahigh-speedswitching. | SANYOSanyo 三洋三洋电机株式会社 | SANYO | ||
6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
SinglechipUSBtoasynchronousserialdatatransferinterface | FTDIFuture Technology Devices International Ltd FTDIFuture Technology Devices International Ltd | FTDI | ||
TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures | FTDIFuture Technology Devices International Ltd FTDIFuture Technology Devices International Ltd | FTDI | ||
TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures | FTDIFuture Technology Devices International Ltd FTDIFuture Technology Devices International Ltd | FTDI | ||
USBtoBASICUARTIC | FTDIFuture Technology Devices International Ltd FTDIFuture Technology Devices International Ltd | FTDI | ||
TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures | FTDIFuture Technology Devices International Ltd FTDIFuture Technology Devices International Ltd | FTDI | ||
VSBAudioScrambler | CMLMICROCML Microcircuits CML公司 | CMLMICRO |
详细参数
- 型号：
FRM234
- 制造商：
INTERSIL
- 制造商全称：
Intersil Corporation
- 功能描述：
7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
isc |
2024 |
TO-3 |
150 |
国产品牌isc,可替代原装 |
询价 | ||
FERROXCUBE |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
YAGEO/国巨 |
2022+ |
DIP |
25000 |
原厂代理 终端免费提供样品 |
询价 | ||
YAGEO/国巨 |
23+ |
DIP |
6800 |
专注配单,只做原装进口现货 |
询价 | ||
YAGEO-国巨 |
24+25+/26+27+ |
车规-电阻器 |
76052 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
YAGEO/国巨 |
23+ |
DIP |
6800 |
专注配单,只做原装进口现货 |
询价 | ||
YAGEO |
6000 |
面议 |
19 |
N/A |
询价 | ||
PHYCOMP |
ERX3SJ6R8A |
10000 |
全新原装现货 样品可售 |
询价 | |||
PHYCOMP |
21+ROHS |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
FUJITSU |
2001 |
光纤线 |
9 |
原装现货海量库存欢迎咨询 |
询价 |
相关规格书
更多- FRM234D
- FRM234R
- FRM240H
- FRM243910
- FRM244D
- FRM244R
- FRM-25GR-52-100R
- FRM-25GR-52-120R
- FRM-25GR-52-150R
- FRM-25GR-52-180R
- FRM-25GR-52-220R
- FRM27-3C90
- FRM3200CC
- FRM3210CC
- FRM3220CC
- FRM3WSGR-73-100R
- FRM3WSGR-73-120R
- FRM3WSGR-73-150R
- FRM3WSGR-73-180R
- FRM3WSGR-73-220R
- FRM3Z121LT
- FRM3Z231LT
- FRM3Z232BS-A
- FRM3Z232LY
- FRM3Z621LT
- FRM430H
- FRM440D
- FRM440R
- FRM450D
- FRM450R
- FRM-50GR-52-100R
- FRM-50GR-52-120R
- FRM-50GR-52-150R
- FRM-50GR-52-180R
- FRM-50GR-52-220R
- FRM5J141GW
- FRM5J142GW
- FRM5N141GT
- FRM5N142DS
- FRM5N143DS
- FRM5W231DR
- FRM5W231LT
- FRM5W232FY
- FRM5W232LY
- FRM5W621LT
相关库存
更多- FRM234H
- FRM240D
- FRM240R
- FRM24-3C90
- FRM244H
- FR-M25-AC240V-16
- FRM-25GR-52-10R
- FRM-25GR-52-12R
- FRM-25GR-52-15R
- FRM-25GR-52-18R
- FRM27
- FRM27-3C91
- FRM3205CC
- FRM3215CC
- FRM3-4B3-12VDC
- FRM3WSGR-73-10R
- FRM3WSGR-73-12R
- FRM3WSGR-73-15R
- FRM3WSGR-73-18R
- FRM3Z121KT
- FRM3Z231KT
- FRM3Z232BS
- FRM3Z232HY
- FRM3Z621KT
- FRM430D
- FRM430R
- FRM440H
- FRM440R4
- FRM450H
- FR-M50-AC480V-28
- FRM-50GR-52-10R
- FRM-50GR-52-12R
- FRM-50GR-52-15R
- FRM-50GR-52-18R
- FRM5J141GT
- FRM5J142DS
- FRM5J143DS
- FRM5N141GW
- FRM5N142GW
- FRM5W231BS
- FRM5W231KT
- FRM5W232BS
- FRM5W232HY
- FRM5W621KT
- FR-M65-AC208V-54
