12A, 500V, 0.410 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100KRAD(Si) and 1000KRAD(Si) with neutron hardness ra

文件：48.03 Kbytes 页数：6 Pages

INTERSIL

isc N-Channel MOSFET Transistor

文件：49.18 Kbytes 页数：2 Pages

ISC

无锡固电

17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness r

文件：47.99 Kbytes 页数：6 Pages

INTERSIL

17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness r

文件：47.99 Kbytes 页数：6 Pages

INTERSIL