首页 >FQT1N60CTF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PowerMOSFET(Vdss=600V,Rds(on)max=7.0ohm,Id=1.4A) Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •PowerFactorCorrecti | IRF International Rectifier | IRF | ||
SMPSMOSFET | IRF International Rectifier | IRF | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •UninterruptiblePowerSup | LUCKY-LIGHT Lucky Light Electronic | LUCKY-LIGHT | ||
iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=7Ω(MAX) •Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •UninterruptiblePowerSup | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceand avalanchevoltageandcurrent •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPL | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SMPSMOSFET Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications ●SwitchModePowerSupply(SMPS) ●UninterruptablePowerSupply ●PowerFactorCorrecti | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
详细参数
- 型号：
FQT1N60CTF
- 制造商：
FAIRCHILD
- 制造商全称：
Fairchild Semiconductor
- 功能描述：
N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ohm
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi |
24+ |
SOT-223-4 |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
ON-SEMI |
22+ |
N/A |
4000 |
原装正品 香港现货 |
询价 | ||
ON/安森美 |
24+ |
SOT-223 |
2500 |
只做原厂渠道 可追溯货源 |
询价 | ||
ON-SEMI |
20+ |
6000 |
英瑞芯现货库存 |
询价 | |||
onsemi(安森美) |
24+ |
SOT-223-4 |
10613 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ON(安森美) |
23+ |
SOT-223 |
9889 |
公司只做原装正品,假一赔十 |
询价 | ||
ON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
FAIRCHILDONSEMICONDUCTOR |
21+ |
NA |
28000 |
只做原装,假一罚十 |
询价 | ||
ON(安森美) |
24+ |
SOT-223 |
32048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 | ||
NK/南科功率 |
2025+ |
SOT-223-4 |
25000 |
国产南科平替供应大量 |
询价 |
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