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FQU2N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU2N60C

600VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU2N60C

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU2N60C

N-ChannelQFET짰MOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU2N60C

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU2N60C

N-ChannelQFETMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductorÿsproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,an

KERSEMI

Kersemi Electronic Co., Ltd.

FQU2N60C

N-ChannelQFET짰MOSFET600V,1.9A,4.7廓

Description ThisN-ChannelenhancementmodepowerMOSFETis producedusingONSemiconductor’sproprietaryplanar stripeandDMOStechnology.ThisadvancedMOSFET technologyhasbeenespeciallytailoredtoreduceon-state resistance,andtoprovidesuperiorswitchingperformance andhighaval

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FQU2N60C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1.9A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.7Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQU2N60CTU

LowGateCharge(Typ.8.5nC)

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU2N60CTU

N-ChannelQFET짰MOSFET600V,1.9A,4.7廓

Description ThisN-ChannelenhancementmodepowerMOSFETis producedusingONSemiconductor’sproprietaryplanar stripeandDMOStechnology.ThisadvancedMOSFET technologyhasbeenespeciallytailoredtoreduceon-state resistance,andtoprovidesuperiorswitchingperformance andhighaval

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    FQP2N60C

  • 功能描述:

    MOSFET 600V N-Channel Advance Q-FET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
24+
TO220
8950
BOM配单专家,发货快,价格低
询价
FAIRCHILD/仙童
25+
TO-220
45000
FAIRCHILD/仙童全新现货FQP2N60C即刻询购立享优惠#长期有排单订
询价
FAIRCHILD
23+
TO-220
65400
询价
FSC
14+无铅
TO-220
25700
优势产品,博盛微热卖!!!
询价
onsemi(安森美)
24+
TO-220
7828
支持大陆交货,美金交易。原装现货库存。
询价
ON/安森美
2410+
TO-220
30
原装正品.假一赔百.正规渠道.原厂追溯.
询价
11+
9862
询价
FSC
24+
原厂封装
20000
原装现货假一罚十
询价
FSC
17+
TO-220
6200
100%原装正品现货
询价
FAIRCHIL
2015+
TO-220
12500
全新原装,现货库存长期供应
询价
更多FQP2N60C供应商 更新时间2025-7-25 16:36:00