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FQD5N15TM

N-channelEnhancementModePowerMOSFET

Features VDS=200V,ID=8A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FQD5N15TM

N-ChannelQFET짰MOSFET150V,4.3A,800m廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQI5N15

150VN-ChannelMOSFET

Features •4.5A,500V,RDS(on)=1.8Ω@VGS=10V •Lowgatecharge(typical13nC) •LowCrss(typical8.5pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP5N15

150VN-CHANNELMOSFET

150VN-CHANNELMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF5N15

150VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU5N15

150VN-ChannelMOSFET

150VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU5N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.3A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

KSMU5N15

150VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

SSM5N15FE

HighSpeedSwitchingApplicationsAnalogSwitchApplications

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

SSM5N15FE

HighSpeedSwitchingApplications

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

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