FQB9N08L中文资料仙童半导体数据手册PDF规格书

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.

特性 Features

• 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V

• Low gate charge ( typical 4.7 nC)

• Low Crss ( typical 16 pF)

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

• Low level gate drive requirments allowing direct operation from logic drives