订购数量 | 价格 |
---|---|
1+ |
FQB22P10_ONSEMI/安森美半导体_100V P-Channel MOSFET汇莱威一部
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号
:FQB22P10
- 漏源电压(Vdss)
:100V
- 栅源极阈值电压(最大值)
:4V @ 250uA
- 漏源导通电阻(最大值)
:125 mΩ @ 11A,10V
- 类型
:P 沟道
- 功率耗散(最大值)
:3.75W,125W(Tc)
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