首页 >FPV18N50>规格书列表
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500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelEnhancementModePowerMOSFET Description ThisadvancedMOSFETfamilyhasoptimizedon-state resistance,andalsoprovidessuperiorswitching performanceandhigheravalancheenergystrength.This devicefamilyissuitableforhighefficiencyswitchmode powersupplies. Application lSwitchModePowerSupply(SMPS) l | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | GOFORD | ||
500VN-ChannelMOSFET | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
SuperiorAvalancheRuggedTechnology | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
SuperiorAvalancheRuggedTechnology | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
500V/18AN-ChannelEnhancementModeMOSFET | HY HY ELECTRONIC CORP. | HY | ||
PowerMOSFET 1.LowGateChargeQgResultsinSimpleDriveRequirement 2.ImprovedGate,AvalancheandDynamicdV/dtRuggedness 3.FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent 4.LowRDS(on) 5.Lead(Pb)-freeAvailable | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET(Vdss=500V,Rds(on)max=0.26ohm,Id=27A) Applications 1.SwitchModePowerSupply(SMPS) 2.UninterruptiblePowerSupply 3.HighSpeedPowerSwitching 4.HardSwitchedandHighFrequencyCircuits | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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