FPD750中文资料POWER pHEMT数据手册II-VI规格书
FPD750规格书详情
描述 Description
The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25μmx750μm Schottky barrier gate, defined by high–resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications.
特性 Features
• 5dBm Linear Output Power at 12GHz
• 5dB Power Gain at 12GHz
• 5dB Max Stable Gain at 12GHz
• 38dBm OIP3
• 50% Power-Added Efficiency
应用 Application
• Narrowband and Broadband High-Performance Amplifiers
• SATCOM Uplink Transmitters
• PCS/Cellular Low-Voltage High-Efficiency Output Amplifiers
• Medium-Haul Digital Radio Transmitters
技术参数
- 型号：
FPD750
- 制造商：
FILTRONIC
- 制造商全称：
FILTRONIC
- 功能描述：
0.5W POWER PHEMT
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RFMD/威讯 |
24+ |
N/A |
22055 |
郑重承诺只做原装进口现货 |
询价 | ||
FILTR |
17+ |
SOT89 |
6200 |
100%原装正品现货 |
询价 | ||
FILTRONIC |
23+ |
SOT-89 |
50000 |
只做原装正品 |
询价 | ||
FILTRONI |
2023+ |
SOT-89 |
8635 |
一级代理优势现货,全新正品直营店 |
询价 | ||
FILTRONIC |
2450+ |
SOT89 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
RFMD |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
RFMICRODEVICESINC |
2223+ |
SOT89 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 | ||
FILTRONI |
25+ |
SOT89 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
FILTRONI |
24+ |
SMD |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
原装FILTRONI |
19+ |
SOT-89 |
20000 |
询价 |
