0.5W POWER pHEMT

文件：241.96 Kbytes 页数：4 Pages

RFMD

威讯联合

0.5W POWER PHEMT

文件：175.04 Kbytes 页数：2 Pages

FILTRONIC

0.5W POWER PHEMT

文件：145.59 Kbytes 页数：3 Pages

FILTRONIC

POWER pHEMT

The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25μmx750μm Schottky barrier gate, defined by high–resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and pro • 5dBm Linear Output Power at 12GHz\n• 5dB Power Gain at 12GHz\n• 5dB Max Stable Gain at 12GHz\n• 38dBm OIP3\n• 50% Power-Added Efficiency;

II-VI

0.5W POWER PHEMT

文件：145.59 Kbytes 页数：3 Pages

FILTRONIC

0.5W POWER pHEMT

文件：241.96 Kbytes 页数：4 Pages

RFMD

威讯联合

0.5W POWER pHEMT

文件：241.96 Kbytes 页数：4 Pages

RFMD

威讯联合

0.5W POWER pHEMT

文件：241.96 Kbytes 页数：4 Pages

RFMD

威讯联合

LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT

文件：244.71 Kbytes 页数：5 Pages

FILTRONIC

LOW NOISE HIGH LINEARITY PACKAGED PHEMT

文件：419.37 Kbytes 页数：9 Pages

FILTRONIC