FPD1500中文资料1 W Power pHEMT数据手册II-VI规格书

描述 Description

The FPD1500 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25 mm by 1500 mm Schottky barrier gate that is defined by high-resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications.

特性 Features

• 30 dBm Linear Output Power at 12 GHz
• 9 dB Power Gain at 12 GHz
• 12.5 dB Maximum Stable Gain at 12 GHz
• 41 dB Output IP3
• 35% Power-Added Efficiency

应用 Application

• Narrowband and Broadband High-Performance Amplifiers
• SATCOM Uplink Transmitters
• PCS/Cellular Low-Voltage High-Efficiency Output Amplifiers
• Medium-Haul Digital Radio Transmitters