1W POWER pHEMT

文件：242.53 Kbytes 页数：4 Pages

RFMD

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1W POWER PHEMT

文件：156.07 Kbytes 页数：3 Pages

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1 W Power pHEMT

The FPD1500 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25 mm by 1500 mm Schottky barrier gate that is defined by high-resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial str • 30 dBm Linear Output Power at 12 GHz\n• 9 dB Power Gain at 12 GHz\n• 12.5 dB Maximum Stable Gain at 12 GHz\n• 41 dB Output IP3\n• 35% Power-Added Efficiency;

II-VI

1W POWER pHEMT

Qorvo

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1W POWER PHEMT

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1W POWER pHEMT

文件：242.53 Kbytes 页数：4 Pages

RFMD

威讯联合

1W POWER pHEMT

文件：242.53 Kbytes 页数：4 Pages

RFMD

威讯联合

1W POWER pHEMT

文件：242.53 Kbytes 页数：4 Pages

RFMD

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LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT

文件：233.04 Kbytes 页数：5 Pages

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LOW NOISE HIGH LINEARITY PACKAGED PHEMT

文件：317.79 Kbytes 页数：10 Pages

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