首页 >FP5502SDPTR>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
EIA/ITUPABXSLICwith30mALoopFeed Features •Capableof12Vor5V(VB+)Operation •MonolithicIntegratedDevice •DIHighVoltageProcess •CompatibleWithWorldwidePBXPerformance Requirements •ControlledSupplyofBatteryFeedCurrentforShortLoops (30mA) •InternalRingRelayDriver •LowPowerConsumptionDuring | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
EIA/ITUPABXSLICwith30mALoopFeed TheIntersilSLICincorporatesmanyoftheBORSHTfunctionsonasingleICchip.ThisincludesDCbatteryfeed,aringrelaydriver,supervisoryandhybridfunctions.Thisdeviceisdesignedtomaintaintransmissionperformanceinthepresenceofexternallyinducedlongitudinalcurrents.Usingthe | Intersil Intersil Corporation | Intersil | ||
EIA/ITUPABXSLICwith30mALoopFeed | Intersil Intersil Corporation | Intersil | ||
NPNPlanarSiliconTransistor HighVoltagePowerSwitchModeApplication •SmallVarianceinStorageTime •WideSafeOperatingArea •SuitableforElectronicBallastApplication | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPNTripleDiffusedPlanarSiliconTransistor Features •HighVoltagePowerSwitchSwitchingApplication •WideSafeOperatingArea •Built-inFree-WheelingDiode •SuitableforElectronicBallastApplication •SmallVarianceinStorageTime •TwoPackageChoices:D-PAKorTO-220 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
HighVoltagePowerSwitchSwitchingApplication Features •HighVoltagePowerSwitchSwitchingApplication •WideSafeOperatingArea •Built-inFree-WheelingDiode •SuitableforElectronicBallastApplication •SmallVarianceinStorageTime •TwoPackageChoices:D-PAKorTO-220 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
HighVoltagePowerSwitchSwitchingApplication Features •HighVoltagePowerSwitchSwitchingApplication •WideSafeOperatingArea •Built-inFree-WheelingDiode •SuitableforElectronicBallastApplication •SmallVarianceinStorageTime •TwoPackageChoices:D-PAKorTO-220 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=1200V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=0.6V(Max)@IC=0.4A APPLICATIONS ·Lowfrequencyamplifier | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=600V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=0.6V(Max)@IC=0.4A APPLICATIONS ·Lowfrequencyamplifier | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HighVoltagePowerSwitchSwitchingApplication Features •HighVoltagePowerSwitchSwitchingApplication •WideSafeOperatingArea •Built-inFree-WheelingDiode •SuitableforElectronicBallastApplication •SmallVarianceinStorageTime •TwoPackageChoices:D-PAKorTO-220 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
